"EPC’s enhancement-mode GaN (eGaN) transistors switch up to ten times faster than silicon MOSFETs, with ‘zero’ stored charge. The increased switching speed of eGaN FETs allows amplifier designers to increase PWM switching frequencies, reduce dead-time, and drastically reduce feedback; producing a sound quality previously limited to large, complex, heavy Class-A amplifier systems.Demonstrating the superior performance of eGaN technology with their eGaNAMP2016 amplifier, Elegant Audio Solutions of Austin, Texas, has produced an amplifier capable of a continuous power output of 200 Watts into an 8Ω, or 400 Watts into a 4Ω speaker load, with THD+N as low as 0.005% and very low feedback."
https://m.eet.com/images/planetanalog/2016/10/564363/Image-4.jpg
Elegant Audio Solutions’ eGaNAMP2016 Class D amplifier with audiophile level audio performance.
Moreover, this is done without the need for a heat sink and eGaN-based amplifier can plug directly into the standard amplifier implementation of many existing systems.
In addition, the higher output filter frequency makes output filter design less expensive and the higher switching frequency makes EMI/EMC compliance much easier to accomplish.
As noted, since the switching edges of the eGaN FET are cleaner, and introduce less ringing With a good layout, overshoot and ringing can be virtually eliminated [3]. With the reduction in both the output filter costs and the virtual elimination of heat sink costs, the eGaN FET-based high-definition audio system will not only sound much better, but will be much smaller, and have a lower system-level cost than the classic MOSFET-based systems.
Cheers George

