Atmo::
When I have a mosfet device under test, what parameter am I looking for?
Under what conditions will I be able to measure this parameter?
The 'capacitive' element of a mosfet would be 2 conductors, separated by an insulator. Now, the drain, source and gate will all have resistence associated with them and the gate oxide, usually pretty thin.....on the order of angstroms, is capacitive but how much? in the nano farads, for sure.
Their doesn't appear to be much capacitance between source and drain since they are both just differently doped regions of the substrate, except in International Rectifier HexFet devices.....(of which Carver was a big fan)
Even the devices I'm used to building, in which the drain is on the bottom of the device have no capacitive elements, again, except the gate oxide.
just curious...........Instead of magfan, you can call me FabGuy.
When I have a mosfet device under test, what parameter am I looking for?
Under what conditions will I be able to measure this parameter?
The 'capacitive' element of a mosfet would be 2 conductors, separated by an insulator. Now, the drain, source and gate will all have resistence associated with them and the gate oxide, usually pretty thin.....on the order of angstroms, is capacitive but how much? in the nano farads, for sure.
Their doesn't appear to be much capacitance between source and drain since they are both just differently doped regions of the substrate, except in International Rectifier HexFet devices.....(of which Carver was a big fan)
Even the devices I'm used to building, in which the drain is on the bottom of the device have no capacitive elements, again, except the gate oxide.
just curious...........Instead of magfan, you can call me FabGuy.

